The effect of growth temperature on the coaxial InxGa1 − xN/GaN nanowires grown by metalorganic chemical vapor deposition

► Coaxial InxGa1 − xN/GaN nanowires (NWs) were grown on Si(111) substrates. ► Two step growth procedures were adopted to grow core and shell structures. ► A very smooth surface morphology of InxGa1 − xN/GaN NWs was obtained. ► Dissociation of precursors at an elevated temperature forms the uniform coaxial NWs.