کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1667047 1008840 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Solution processed Al doped ZnO film fabrication through electrohydrodynamic atomization
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Solution processed Al doped ZnO film fabrication through electrohydrodynamic atomization
چکیده انگلیسی

In this study, highly transparent, 250 nm thick films of Aluminum doped Zinc-oxide (ZnO:Al) are achieved on glass substrates at ambient conditions through a solution processing technique called electrohydrodynamic atomization. A 10 wt.% monodispersed solution containing 6% ZnO:Al nanoparticles (ZnO/Al2O3) in ethanol has been synthesized first and then used in the deposition process as the working solution. Pure and uniform transparent films with an average transmittance of 93% have been deposited with crystal structure exhibiting both zincite and gahnite phases. Surface composition purity has been confirmed using X-ray photoelectron spectroscopy technique and the clear indication of Zn-2p and Al-2p peaks confirms surface integrity. Fourier Transform Infrared analysis further confirms the presence of aluminum in the samples. The electrical properties are studied by recording and analyzing the current–voltage (I–V) measurements and the resistivity has been estimated from the slope of the IV-curve which is approximately 25 mΩ.cm. The layer roughness has been characterized using atomic force microscopy.


► Aluminum doped Zinc oxide (ZnO:Al) films are made via electrohydrodynamic atomization.
► ZnO:Al nano-particle ink is used to form thin films in single step at room conditions.
► Scanning electron and atomic force microscopes confirm fine layer characteristics.
► X-ray photoelectron and Fourier Transform-Infrared spectroscope confirm film purity.
► Transparent and conductive films have been fabricated with wurtzite structure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 20, 1 August 2012, Pages 6398–6403
نویسندگان
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