Photoluminescence investigation of GaAs1 − xBix/GaAs heterostructures

In this work the impact of doped GaAs buffer and cap layers on the bismide photoluminescence (PL) spectra has been studied. For this study three types of heterostructures were grown: a thin GaAsBi layer deposited directly onto the nominally undoped GaAs buffer layer, a GaAsBi layer grown onto the GaAs:Be layer, and a GaAsBi layer deposited onto the GaAs:Be layer and capped with the GaAs:Be layer. It has been demonstrated that p-type doping of the GaAs buffer and cap layers is resulting in a significant increase of the PL intensity. This enhancement was explained by a better photoexcited electron and hole confinement in the GaAsBi layer.

► The influence of GaAs buffer and cap doping on GaAsBi photoluminescence (PL).
► The enhancement of PL for GaAsBi sandwiched between p-GaAs layers.
► Increase in PL due to better photoexcited e and h confinement in GaAsBi layer.