Effect of Sb doping on the opto-electronic properties of SnO2 nanowires

Antimony (Sb) doping of SnO2 nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO2 NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO2 NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO2 NW FETs.

► Sb-doping induced defect states were distinguished by photoluminescence measurement.
► Sb-doping enhanced the field effect mobility and charge concentration.
► Off-state UV photosensitivity of SnO2 nanowire field effect transistor (FET) was 106.
► Sb-doping improved the UV-response and recovery rates of SnO2 nanowire FETs.