Effects of Si-ion implantation on crystallization behavior of Ge2Sb2Te5 film

► Material performance of Ge2Sb2Te5 (GST) is modified by Si-ion implantation. ► Crystallization temperature of Si-ion implanted GST films is much enhanced. ► Thermal stability of GST is much improved at high dose Si-ion implantation. ► FCC transition to HCP of GST is inhibited at high dose Si-ion implantation.