Band offset of the In2S3/indium tin oxide interface measured by X-ray photoelectron spectroscopy

In2S3 thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical–chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In2S3/ITO interface has been determined by XPS resulting in a value of 1.9 ± 0.2 eV. Consequently, the conduction band offset has been estimated to be 1.0 ± 0.4 eV.

► In2S3 thin films grown on indium tin oxide (ITO) coated substrates.
► In2S3 films prepared by chemical spray pyrolysis.
► Films show a tetragonal β‐In2S3 structure with substitutional ‘O’ in ‘S’ sites.
► The In2S3/ITO interface has been investigated by X-ray photoelectron spectroscopy.
► The valence and conduction band offsets were 1.9 ± 0.2 eV and 1.0 ± 0.4 eV, respectively.