کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667114 | 1008843 | 2012 | 4 صفحه PDF | دانلود رایگان |
In2S3 thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical–chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In2S3/ITO interface has been determined by XPS resulting in a value of 1.9 ± 0.2 eV. Consequently, the conduction band offset has been estimated to be 1.0 ± 0.4 eV.
► In2S3 thin films grown on indium tin oxide (ITO) coated substrates.
► In2S3 films prepared by chemical spray pyrolysis.
► Films show a tetragonal β‐In2S3 structure with substitutional ‘O’ in ‘S’ sites.
► The In2S3/ITO interface has been investigated by X-ray photoelectron spectroscopy.
► The valence and conduction band offsets were 1.9 ± 0.2 eV and 1.0 ± 0.4 eV, respectively.
Journal: Thin Solid Films - Volume 520, Issue 18, 1 July 2012, Pages 5856–5859