The effect of deposition parameters and post treatment on the electrical properties of Mo thin films

In this study, we deposited low-resistivity molybdenum (Mo) thin films on soda-lime glass substrates with good adhesion. We adjusted various deposition parameters such as the sputtering power (52–102 W), working distance (5.5–9 cm) and annealing temperature (26–400 °C) to investigate their impact on the sheet resistance. By using a DC magnetron sputtering system, we obtained Mo thin films having the lowest sheet resistance of 0.190 Ω/□ with a sputtering power of 82 W, working distance of 6.5 cm, and annealing temperature of 400 °C; in addition, these films had good adhesivity. These Mo thin films were suitable for use as the Mo back contact in Cu(In,Ga)Se2-based solar cells.

► Low-resistivity molybdenum (Mo) thin films with good adhesion were prepared.
► The working distance has a great influence on microstructure of Mo films.
► Decrease in working distance can apparently improve the resistivity of Mo films.
► The sheet resistance of 0.19 Ω/□ was obtained under 82 W, 6.5 cm, and 400 °C.
► These Mo films were suitable for use as back contact in Cu(In,Ga)Se2‐solar cell.