کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667193 | 1008844 | 2012 | 5 صفحه PDF | دانلود رایگان |
ZnO thin films were deposited on glass substrates by direct current (DC) sputtering technique at room temperature (RT) to 400 °C with a 99.999% pure ZnO target. Then the samples deposited at RT were annealed in air from the RT to 400 °C. The effects of substrate temperature (Ts) and annealing treatment (Ta) on the crystallization behavior and the morphology have been studied by X-ray diffraction and atomic force microscopy. We also compared the structural properties of samples deposited at 400 °C on glass to those deposited on Pt/silicon substrate. The resistivity, surface roughness and size of the grains have also been studied and correlated to the thickness of ZnO films deposited on Pt/Si substrates. The experimental results reveal that the substrate has a major influence on the structural and morphological properties. For the films deposited on glass, below 400 °C, Ts and Ta have a similar influence on the structure of the films. Moreover, the ZnO samples deposited at RT and annealed in air have poor electrical properties.
Journal: Thin Solid Films - Volume 520, Issue 14, 1 May 2012, Pages 4712–4716