کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1667248 1008847 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics
چکیده انگلیسی

Thin films of amorphous indium tin oxide were deposited by soft sputtering. The film was gradually annealed in air at temperatures from 110 °C to 150 °C. Its structural and electrical properties were monitored in order to get a better understanding of the annealing process. Firstly, carrier density decreases by oxygen intake. Crystallization speeds up at 150 °C, with a 2.5 D growth of crystallites. The preferred orientations come from sputtering induced seeds. Then, the carrier density increases again due to tin activation. Meanwhile, the carrier mobility is more damaged by the low temperature annealing in air than by a standard annealing in a reducing atmosphere. Thus, tin oxide segregation is suspected at grain boundaries.


► By annealing at 150 °C, film carrier density increases with the crystallinity level.
► By low temperature annealing in air, carrier density decreases due to oxygen uptake.
► Preferred orientations of annealed films come from sputtering induced seeds.
► Carrier mobility decreases heavily by air annealing. SnO2 segregation is suspected.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 11, 30 March 2012, Pages 4021–4025
نویسندگان
, ,