Electrodeposition of amorphous silicon in non-oxygenated organic solvent

We report on the synthesis of amorphous silicon using electrodeposition in two non-oxygenated organic solvents, acetonitril and dichloromethane, under controlled atmosphere. In both solvents, tetraethylammonium chloride has been used as a supporting electrolyte and silicon tetrachloride as a silicon precursor. The porosity and the morphology of the electrodeposited silicon layers have been studied as a function of depositing parameters (solvent, voltage, etc.). We will show the formation from dense to highly porous Si deposits as a function of solvent and experimental parameters. To increase the stability of the deposits before exposure to air, a heat treatment under hydrogen has been performed. The chemical and structural characterizations of the deposit by scanning electron microscopy, energy dispersive X-ray spectroscopy and Raman spectroscopy show the formation of pure amorphous silicon.