Unipolar resistive switching behavior in Dy2O3 films for nonvolatile memory applications

In this article, we report the forming-free resistive switching behavior of a Ru/Dy2O3/TaN memory device incorporating a Dy2O3 thin film fabricated entirely through processing at room temperature. We used X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy to investigate the structural and chemical features of the Dy2O3 film. The dominant conduction mechanisms in the low- and high-resistance states were ohmic behavior and Poole–Frenkel emission, respectively. The Ru/Dy2O3/TaN memory device exhibited a high resistance ratio and provided nondestructive readout and reliable data retention. This memory device has a great potential for application in nonvolatile resistive switching memory.

► The forming-free resistive switching behavior in the Ru/Dy2O3/TaN device was investigated.
► The conduction mechanisms of the device are ohmic behavior and Poole–Frenkel emission.
► This memory device exhibits good electrical characteristics.