کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1667445 | 1008850 | 2012 | 4 صفحه PDF | دانلود رایگان |
Tin sulfide (SnS) is one of the most promising materials for photovoltaics. Here we report on the preparation as well as chemical, structural and physical characterization of the Mo/p-SnS/n-CdS/ZnO heterojunctions. The SnS thin films were grown by hot wall deposition method on the Mo-coated glass substrates at 270–350 °C. The crystal structure and elemental composition were examined by X-ray diffraction and Auger electron spectroscopy methods. The CdS buffer layers were deposited onto the SnS films by chemical bath deposition. The ZnO window layers were deposited by a two step radio frequency magnetron sputtering, resulting in a ZnO bilayer structure: the first layer consists of undoped i-ZnO and the second of Al-doped n-ZnO. The best junctions have an open circuit voltage of 132 mV, a short circuit current density of 3.6 mA/cm2, a fill-factor of 0.29 and efficiency up to 0.5%.
► We used hot wall vacuum deposition method to obtain the absorbing SnS layers.
► We obtained Mo/n-CdS/p-SnS/ZnO heterojunctions.
► The light conversion efficiency of the structures reaches 0.5%.
Journal: Thin Solid Films - Volume 520, Issue 17, 30 June 2012, Pages 5807–5810