Crystallization and electrical characteristics of Ge1Cu2Te3 films for phase change random access memory

Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical properties of Ge1Cu2Te3 compound films with a low melting point of about 500 °C for PCRAM application. Sputter-deposited Ge1Cu2Te3 amorphous films showed a high crystallization temperature of about 250 °C. The Ge1Cu2Te3 amorphous film showed an electrical resistance decrease of over 102-fold and exhibited a small increase in thickness of 2.0% upon crystallization. The Ge1Cu2Te3 memory devices showed reversible switching behaviors and exhibited a 10% lower power consumption for the reset operation than the conventional Ge2Sb2Te5 memory devices. Therefore, the Ge1Cu2Te3 compound is a promising phase change material for PCRAM application.

► Low melting point Ge1Cu2Te3 (GCT) film for phase change random access memory application.
► GCT amorphous film showed a high crystallization temperature of about 250 °C.
► GCT amorphous film exhibited a small increase in thickness of 2.0% upon crystallization.
► GCT device exhibited 10% lower power consumption for reset operation than Ge2Sb2Te5 device.