کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1667485 1008851 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The OFF to ON switching time and ON state consolidation in write-once-read-many-times memory devices based on doped and undoped carbon-sphere/polymer composites
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The OFF to ON switching time and ON state consolidation in write-once-read-many-times memory devices based on doped and undoped carbon-sphere/polymer composites
چکیده انگلیسی

We investigate the write operation in memory devices prepared using thin films of carbon spheres and cross-linked poly(4-vinylphenol) composites. Three types of carbon-spheres (N-doped, B-modified and undoped spheres) are used and their influence on memory characteristics is discussed. These memory devices show write-once-read-many-times (WORM) characteristics with an OFF to ON (high resistance to low resistance) transition at low voltages, of ca. 2 V. We investigate the ON-current, OFF-current and ON to OFF current ratio of devices prepared with composites of the three types of carbon spheres. The results are presented for devices prepared with three different carbon sphere concentration, for each carbon sphere type. The OFF to ON transition occurs in less than 1 μs and the ON-state in the best case is consolidated in less than 10 μs, for a write-operation voltage of 5 V.


► We prepared write-once-read-many times organic memories based on composites films.
► Composites based on undoped, N-doped and B-doped carbon spheres are compared.
► The ON/OFF current ratio depends on carbon sphere doping and concentration.
► The ON–OFF transition in the memories occurs in less than 1 μs.
► The ON-state is consolidated in 10 μs when undoped carbon spheres are used.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 13, 30 April 2012, Pages 4427–4431
نویسندگان
, , , ,