Fluctuation of average position of electrons in Coulomb island in Si single-electron transistor

Average position of electrons along thickness direction in a Coulomb island in an n-channel Si single-electron transistor is estimated by analyzing the back-gate voltage dependence of peak voltage (defined as the gate voltage giving a drain current peak) as a function of peak number. It is found that the accuracy of estimated average position is better than 0.5 nm and that the average position fluctuates as the peak number increases.