کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667555 | 1008852 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An artificial nonradiative recombination center model created by use of a Si1 − xGex/Si quantum-well-inserted pseudomorphic superlattice
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: An artificial nonradiative recombination center model created by use of a Si1 − xGex/Si quantum-well-inserted pseudomorphic superlattice An artificial nonradiative recombination center model created by use of a Si1 − xGex/Si quantum-well-inserted pseudomorphic superlattice](/preview/png/1667555.png)
چکیده انگلیسی
An attempt is made to mimic a system under the influence of nonradiative recombination (NR) by use of a Si1 − xGex quantum well (QW) embedded in a Si1 − xGex/Si strained-layer superlattice. Carrier transfer mediates the coupling between the first miniband of superlattice barrier and QW ground state, which is useful in setting up an artificial NR center based only on radiative channels. Steady-state and transient photoluminescence (PL) reproduces spectroscopic features shared by NR systems at large such as quadratic dependence of PL intensity on excitation power and prolonged decay time at increased pumping, which are quite opposite to radiative recombination.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 8, 1 February 2012, Pages 3365–3368
Journal: Thin Solid Films - Volume 520, Issue 8, 1 February 2012, Pages 3365–3368
نویسندگان
Yosuke Terada, Yuhsuke Yasutake, Susumu Fukatsu,