کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667557 | 1008852 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study](/preview/png/1667557.png)
چکیده انگلیسی
Schottky-barrier changes by the segregation and structural disorder are studied using the first-principles calculations and adopting Au/Si interface. The Schottky barrier for electrons simply decreases as increasing the valency of segregated atoms from II to VI families, which variation is shown closely related to how the Si atoms are terminated at the interface. On the other hand, the structural disorders (defects) prefer to locate near the interface and the Schottky barrier for hole carriers does not change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials reflecting the appearance of Si dangling bonds.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 8, 1 February 2012, Pages 3374–3378
Journal: Thin Solid Films - Volume 520, Issue 8, 1 February 2012, Pages 3374–3378
نویسندگان
T. Nakayama, K. Kobinata,