Polycrystalline ZnO–In2O3 thin films as gas sensors

Polycrystalline ZnO–In2O3 thin films were prepared by thermal oxidation in air of metallic Zn–In films deposited onto glass substrates by thermal evaporation under vacuum. Different oxidation conditions (oxidation temperature, oxidation time, heating rate) were used in order to prepare homogeneous films that can be used as gas sensors. Polycrystalline structure of the as-obtained films was confirmed by X-ray and electron diffraction investigations. The electrical conductivity of various thin film samples ranged between 0.84 and 6.44 (Ω cm)− 1.Gas sensitivity to six different gasses (ammonia, methane, LPG, acetone, ethanol and formaldehyde) was evaluated and it was found that the highest sensitivity was obtained for ammonia.