Multicomponent oxide thin-film transistors fabricated by a double-layer inkjet printing process

In this work we report on the fabrication and characterization of multicomponent metal oxide thin-film transistors with a double-layer inkjet printing process. Both the active area and source–drain electrodes of the devices are printed with inks based on metal salt precursors to form Ga2O3–In2O3–ZnO and In2O3–SnO respectively. Electrical characterization has shown that the devices' performance, apart from the active area composition, can also be affected by the printing drop spacing. In general, devices printed with Ga:In:Zn 2:4:1 composition present the highest field effect mobility (~ 1.75–3 cm2 V−1 s−1). More stable devices with improved switching, but with a compromise over field effect mobility (~ 0.5–0.9 cm2 V−1 s−1) were obtained for the 2:4:2 composition.