کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667707 | 1008856 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and properties of p-type transparent conductive Cu-doped NiO films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The NiO-Cu composite films with various Cu contents of 0-18.17 at.% are deposited on a glass substrate. An ultra high electrical resistivity (Ï) is obtained and cannot be detected by a four point probe measurement when the Cu content in the films is lower than 6.97 at.%. The Ï value is reduced significantly to 35.8 Ω-cm as Cu content is increased to 9.18 at.%, and it further decreases to 0.02 Ω-cm when the Cu content further increases to 18.17 at.%. The Hall measurement for all Cu-doped NiO films shows p-type conduction. In addition, the transmittance of NiO films also decreases continuously from 96% to 43% as Cu content increases from 0 to 18.17 at.%. The XRD patterns of Cu-doped NiO films show that only NiO peaks appear and the crystallinity of NiO films degrades as Cu content exceeds 6.97 at.%. A large amount of lattice sites of Ni2+ ions in a NiO crystallite is replaced by the Cu+ ions that lead to p-type conduction and result in the degradation of crystallinity for NiO-Cu composite films that have a higher Cu content.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 15, 31 May 2011, Pages 4944-4947
Journal: Thin Solid Films - Volume 519, Issue 15, 31 May 2011, Pages 4944-4947
نویسندگان
S.C. Chen, T.Y. Kuo, Y.C. Lin, H.C. Lin,