کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667712 | 1008856 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of titanium current on structure and hardness of aluminium titanium nitride deposited by reactive unbalanced magnetron co-sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nanocrystalline aluminium titanium nitride (AlTi3N) thin films were deposited on Si (100) wafer and grid substrates without external heating and biasing at room temperature by reactive unbalanced magnetron co-sputtering technique using pure individual titanium and aluminium targets. The effects of titanium current (ITi) on the structure and hardness of these films have been studied. The films were sputtered with Ar and N2 gases flow rate of 8 and 4Â sccm, respectively. The sputtering current of the aluminium current (IAl) was kept at 600Â mA and the sputtering current of titanium (ITi) was varied from 600 to 800Â mA. The films were deposited for different deposition times ranging from 15 to 60Â min. The deposited films were then characterized and analyzed by X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and nanoindentation measurement. The results indicated that the modification of the crystal structure, surface morphology and microstructure were dependent on the deposition parameters. The XRD patterns show polycrystalline structure with preferred orientations in (112), (004) and (153) planes which agree with the standard structure of aluminium titanium nitride (AlTi3N) films. In addition, the structure of AlTi3N was also confirmed by TEM. These results show that the films are composed of high Al content. The root mean square surface roughness and the average thicknesses were strongly influenced by Iti and deposition times. Cross section analysis by SEM showed dense and compact columnar morphology. The typical hardness of the films was approximately 26.24-30.37Â GPa.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 15, 31 May 2011, Pages 4963-4968
Journal: Thin Solid Films - Volume 519, Issue 15, 31 May 2011, Pages 4963-4968
نویسندگان
A. Buranawong, N. Witit-anun, S. Chaiyakun, A. Pokaipisit, P. Limsuwan,