کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667736 | 1008856 | 2011 | 4 صفحه PDF | دانلود رایگان |
The Mn-doped ZnO (Zn1 − xMnxO) thin films with manganese compositions in the range of 0–8 at.% were deposited by radio-frequency (RF) magnetron sputtering on quartz glass substrates at room temperature (RT). The influence of Mn concentration on the structural, electrical and optical properties of Zn1 − xMnxO films has been investigated. X-ray diffraction (XRD) measurements reveal that all the films are single phase and have wurtzite structure with (002) c-axis orientation. The chemical states of Mn have been identified as the divalent state of Mn2+ ions in ZnO lattice. As the content of Mn increases, the c-lattice constant and the optical band gap of the films increase while the crystalline quality deteriorates gradually. Hall-effect measurements reveal that all the films are n-type and the conductivity of the films has a severe degradation with Mn content. It is also found that the intensity of RT photoluminescence spectra (PL) is suppressed and saturates with Mn doping.
Journal: Thin Solid Films - Volume 519, Issue 15, 31 May 2011, Pages 5078–5081