کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667937 | 1008860 | 2011 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effect of deposition temperature on chemical composition and electronic properties of amorphous carbon nitride (a-CNx) thin films grown by plasma assisted pulsed laser deposition Effect of deposition temperature on chemical composition and electronic properties of amorphous carbon nitride (a-CNx) thin films grown by plasma assisted pulsed laser deposition](/preview/png/1667937.png)
The effect of deposition temperature and nitrogen inclusion in amorphous carbon (a-C) films, deposited by plasma enhanced pulsed laser deposition, on chemical composition and electronic transport has been studied. a-CNx films were deposited on Si (100) by pulsed ArF laser ablation of a graphite target, under N2 atmosphere. A radiofrequency (13.56 MHz RF) apparatus was used to generate plasma of excited nitrogen species, and its effect on nitrogen uptake and CNx film formation has been studied. Chemical and micro-structural changes associated to increased deposition temperature and nitrogen incorporation were examined by x-ray photoelectron spectroscopy; electrical properties were analyzed by the four-point-probe methods. Temperature-dependent conductivity measurements are tentatively interpreted and discussed in reference to chemical composition.
Journal: Thin Solid Films - Volume 519, Issue 12, 1 April 2011, Pages 4059–4063