Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition

Transparent p-type conductive Ni0.9Cu0.1O thin films were prepared by pulsed plasma deposition (PPD) method. The effects of substrate temperature and oxygen pressure on the structural, electrical and optical properties of the films were investigated respectively. The film deposited at room temperature exhibits the highest conductivity of 5.17 S cm−1, with an average transmittance of 60% in the visible region. A transparent p-Ni0.9Cu0.1O/n-In2O3:W (IWO) hetero-junction diode was fabricated exhibiting rectifying current–voltage characteristics.