کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668020 1008861 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of CdS/SnS heterostructured device using successive ionic layer adsorption and reaction deposited SnS
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Fabrication of CdS/SnS heterostructured device using successive ionic layer adsorption and reaction deposited SnS
چکیده انگلیسی

In the present work successive ionic layer adsorption and reaction (SILAR) method has been employed for the growth of SnS films on chemical bath deposited CdS thin films. The as-grown and post annealed CdS/SnS heterostructures were investigated under dark and illuminated conditions. It has been observed that annealing improves the quality of the device. This paper presents the attempt towards realizing SnS based heterostructured devices using SnS films grown by SILAR technique.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 10, 1 March 2011, Pages 3368–3372
نویسندگان
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