کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668025 1008861 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation of polycrystalline thin-film transistors with stacked poly-SiGe/poly-Si channel layer for low-voltage applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Formation of polycrystalline thin-film transistors with stacked poly-SiGe/poly-Si channel layer for low-voltage applications
چکیده انگلیسی

A thin-film transistor (TFT) with polycrystalline SiGe/Si stacked channel layer has been proposed for low-voltage applications. For the stacked poly-SiGe/poly-Si channel layer, the resultant 1-μm TFT device can achieve an on/off current ratio above 7 orders and a relatively large on-state current at a low operating voltage, and also cause better transfer characteristics than both the conventional poly-Si and poly-SiGe channel layers. As compared to the poly-Si channel layer, the poly-SiGe channel layer may cause a larger on-state current at a small gate bias of 3 V, due to smaller difference between conduction band and intrinsic level. However, even at a small drain bias of 3 V, the poly-SiGe channel layer leads to an off-state leakage current of about 2 order larger than the poly-Si channel layer, since a smaller energy bandgap may cause more carrier field emission via trap states. As a result, when a poly-SiGe/poly-Si stacked channel layer is employed, the leakage current may be suppressed to a low level as that for the poly-Si channel layer, and the resultant on-state current at a low gate bias voltage can be close to a relatively high level as that for the poly-SiGe channel layer.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 10, 1 March 2011, Pages 3393–3396
نویسندگان
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