کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668034 | 1008861 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of interdiffusion in Sb/As2S3 nano-layered structures by high-resolution X-ray photoelectron spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The photo-stimulated interdiffusion within chalcogenide based nano-layered structures (NLS) produces large changes in properties, which have potential application in optical pattern recording. The mechanism of these changes is investigated for two NLS consisting of 100 alternate layers of antimony and As2S3, but of different relative thicknesses, by high-resolution X-ray photoelectron spectroscopy. The results suggest the formation of Sb–S bonds at the expense of As–S bonds, with a consequent increase in the refractive index but minimal change in thickness. The role of oxygen in photoinduced transformations, especially in the top layers, is characterized and discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 10, 1 March 2011, Pages 3437–3442
Journal: Thin Solid Films - Volume 519, Issue 10, 1 March 2011, Pages 3437–3442
نویسندگان
V. Takats, A.C. Miller, H. Jain, A. Kovalskiy, S. Kokenyesi,