کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668057 | 1008862 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films](/preview/png/1668057.png)
چکیده انگلیسی
Due to their exceptional thermoelectric properties Half-Heusler alloys like MNiSn (M = Ti,Zr,Hf) have moved into focus. The growth of single crystalline thin film TiNiSn and Zr0.5Hf0.5NiSn by dc magnetron sputtering is reported. Seebeck and resistivity measurements were performed and their dependence on epitaxial quality is shown. Seebeck coefficient, specific resistivity and power factor for Zr0.5Hf0.5NiSn at room temperature were measured to be 63 μV Kâ 1, 14.1 μΩ m and 0.28 mW Kâ 2 mâ 1, respectively. Multilayers of TiNiSn and Zr0.5Hf0.5NiSn are promising candidates to increase the thermoelectric figure-of-merit by decreasing thermal conductivity perpendicular to the interfaces. The epitaxial growth of multilayers containing TiNiSn and Zr0.5Hf0.5NiSn is demonstrated by measuring satellite peaks in the X-ray diffraction pattern originating from the additional symmetry perpendicular to the film surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 3, 30 November 2011, Pages 1010-1014
Journal: Thin Solid Films - Volume 520, Issue 3, 30 November 2011, Pages 1010-1014
نویسندگان
Tino Jaeger, Christian Mix, Michael Schwall, Xeniya Kozina, Joachim Barth, Benjamin Balke, Martin Finsterbusch, Yves U. Idzerda, Claudia Felser, Gerhard Jakob,