کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668143 1008863 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Chemical activity of oxygen atoms in the magnetron sputter-deposited ZnO films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Chemical activity of oxygen atoms in the magnetron sputter-deposited ZnO films
چکیده انگلیسی

The role of oxygen atoms in the growth of magnetron sputter-deposited ZnO films was studied by alternating the deposition of a several-nanometer-thick ZnO layer and an O2/Ar mixed plasma exposure, i.e., a layer-by-layer (LbL) technique. The film crystallization was promoted by suppressing the oxygen vacancy and interstitial defects by adjusting the exposure conditions of the O2/Ar plasma. These findings suggest that the chemical potential of the oxygen atom influences the film crystallization and the electronic state. The diffusion and effusion of oxygen atoms at the growing surface have an effect similar to that of thermal annealing, promoted film crystallization and the creation and the annihilation of oxygen- and zinc-related defects. The role of oxygen atoms reaching at the growing film surface is discussed in terms of chemical annealing and a possible oxygen diffusion mechanism is proposed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 20, 1 August 2011, Pages 6903–6909
نویسندگان
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