کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1668149 | 1008863 | 2011 | 5 صفحه PDF | دانلود رایگان |

Metal plasma ion implantation has being successfully developed for improving the electronic and optical properties of semiconductor materials. Prior to deposition, a TiO2 colloidal suspension was synthesized by microwave-induced thermal hydrolysis of the titanium tetrachloride aqueous solution. The TiO2 thin film was optimized to obtain a high-purity crystalline anatase phase by calcinations at 550 °C. The TiO2 coating was uniform without aggregation, which provided good photo conversion efficiency. Ag ion implantation into the as-calcined TiO2 thin films was conducted with 1 × 1015 ~ 1 × 1016 ions/cm2 at 40 keV. The peak position and intensity of the photoluminescence and UV–Vis absorption spectra are quite sensitive to Ag doping. The optical characterization showed a shift in optical absorption wavelength towards infrared ray side, which was correlated with the structure variation of the Ag+ implanted TiO2. Due to the strong capability of forming compounds between the energetic silver ions and TiO2, the photoluminescence emission and UV–Vis absorption efficiencies were improved.
Journal: Thin Solid Films - Volume 519, Issue 20, 1 August 2011, Pages 6935–6939