کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668203 | 1008864 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface states related the bias stability of amorphous In–Ga–Zn–O thin film transistors under different ambient gasses
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Surface states related the bias stability of amorphous In–Ga–Zn–O thin film transistors under different ambient gasses Surface states related the bias stability of amorphous In–Ga–Zn–O thin film transistors under different ambient gasses](/preview/png/1668203.png)
چکیده انگلیسی
This paper investigates the origin of the bias stability under ambient gas (oxygen, moisture and vacuum) of In–Ga–Zn–O thin film transistors with different annealing temperatures. In Zn-based TFTs, the electrical characteristic of device is a strongly function with the ambient gas, the simultaneous gas ambient and bias stresses are applied on devices annealed in atmosphere ambient to study this issue. The result shows the device which is annealed at temperature up to 330 °C has worst reliability. We suppose that the sensitivity of gas ambient depend the defect state, which is associated to the annealing temperature, of surface in a-IGZO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 5, 30 December 2011, Pages 1432–1436
Journal: Thin Solid Films - Volume 520, Issue 5, 30 December 2011, Pages 1432–1436
نویسندگان
Yu-Chun Chen, Ting-Chang Chang, Hung-Wei Li, Shih-Cheng Chen, Wan-Fang Chung, Yi-Hsien Chen, Ya-Hsiang Tai, Tseung-Yuen Tseng, Fon-Shan Yeh(Huang),