کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668310 | 1008865 | 2011 | 4 صفحه PDF | دانلود رایگان |
To go further in the comprehension of hydrogen desorption mechanisms from PECVD (Plasma Enhanced Chemical Vapour Deposited) silicon nitride, a method to determine the chemical composition of amorphous silicon nitride films using fast and non destructive characterization techniques has been developed. In particular, SiH, NH, SiSi and SiN bond concentrations are calculated from Fourier transform infra red spectroscopy, ellipsometry and mass measurement. Next, different PECVD silicon nitride films were annealed at 600 °C during 2 min. Results show that hydrogen desorption from PECVD silicon nitride depends on film mass density and main chemical reactions leading to hydrogen desorption are identified thanks to the determination of SiSi and SiN bond concentrations.
Journal: Thin Solid Films - Volume 519, Issue 19, 29 July 2011, Pages 6550–6553