کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668349 1008867 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy
چکیده انگلیسی

Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 2, 1 November 2011, Pages 739–742
نویسندگان
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