Thin-film transistors with sol-gel deposited Mg0.1Zn0.9O films as active channel layer

We report on field-effect transistors using Mg0.1Zn0.9O thin film as channel layer. The effect of Mg is to increase the band gap and decrease the electron carrier concentration. The Mg0.1Zn0.9O film deposited by sol-gel method has a highly c-axis orientation and excellent optical properties. The devices display a channel mobility of 0.76 cm2 V− 1 s− 1 and an on/off ratio of 400.