کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668483 | 1008869 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement in the bias stability of zinc oxide thin-film transistors using Si3N4 insulator with SiO2 interlayer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improvement in the bias stability of zinc oxide thin-film transistors using Si3N4 insulator with SiO2 interlayer Improvement in the bias stability of zinc oxide thin-film transistors using Si3N4 insulator with SiO2 interlayer](/preview/png/1668483.png)
چکیده انگلیسی
The performance of ZnO thin film transistors (TFT) subjected to SiO2 interlayer treatments on Si3N4 insulators was investigated. In the case of a SiO2 interlayer of 10 nm on Si3N4 insulator, a drastic improvement in device performance was obtained. ZnO TFT with this interlayer showed reduced trap density between the Si3N4 and ZnO channel, bringing remarkable improvement in bias stability characteristics. These devices show good performance and exhibit a high field-effect mobility of 6.41 cm2/Vs, an on/off current ratio of 108, and a subthreshold swing of 1.46 V/decade. Also, the turn-on voltage shifted from − 2 V to − 6 V with negligible changes in the subthreshold swing and field effect mobility after total stress time.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 1, 31 October 2011, Pages 578–581
Journal: Thin Solid Films - Volume 520, Issue 1, 31 October 2011, Pages 578–581
نویسندگان
Woong-Sun Kim, Yeon-Keon Moon, Kyung-Taek Kim, Sae-Young Shin, Jong-Wan Park,