کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668513 | 1008870 | 2010 | 4 صفحه PDF | دانلود رایگان |

Via the sol–gel process, compositionally graded and homogeneous BaZrxTi1 − xO3 (BZT) thin films were grown on (100)-oriented LaNiO3 (LNO)/Si substrates, respectively. The compositionally graded BZT thin film consisted of BaZr0.05Ti0.95O3 (BZT5), BaZr0.10Ti0.90O3 (BZT10) and BaZr0.15Ti0.85O3 (BZT15). Homogeneous thin films of above three compositions were fabricated for comparison. X-ray diffraction measurements show all the BZT thin films exhibit a single perovskite phase with highly (100)-preferred orientation. The temperature-dependent dielectric properties of these films show typical diffuse phase transition, and the phase transition temperature are all lower than −35 °C. A prominent increase of the dielectric constant and a more aligned surface morphology is observed in the compositionally graded thin film compared to the homogeneous samples.
Journal: Thin Solid Films - Volume 518, Issue 24, Supplement, 1 October 2010, Pages e89–e92