کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668532 | 1008870 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures](/preview/png/1668532.png)
چکیده انگلیسی
ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800Â mTorr. XRD characterization showed that for a window of working pressures between 300 and 500Â mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400Â mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 24, Supplement, 1 October 2010, Pages e161-e164
Journal: Thin Solid Films - Volume 518, Issue 24, Supplement, 1 October 2010, Pages e161-e164
نویسندگان
M. Hezam, N. Tabet, A. Mekki,