High-rate deposition by microwave RPECVD at atmospheric pressure

The post-discharge of a microwave resonant cavity working at atmospheric pressure is used to enhance deposition of SiOx thin films from HMDSO by chemical vapor deposition. Maximum static deposition rates are close to 150 μm h− 1 for low power consumption per unit of coated width (~ 100 W/cm). Dynamic deposition rates are close to 3.5 nm m s− 1. The distribution of the coating thickness is heterogeneous over an area of 150 × 90 mm2. The influence of the main parameters of the process is systematically studied to show how the key reactions, i.e. gas phase synthesis of powders and surface deposition, are correlated.