|کد مقاله||کد نشریه||سال انتشار||مقاله انگلیسی||ترجمه فارسی||نسخه تمام متن|
|1668654||1008872||2011||4 صفحه PDF||سفارش دهید||دانلود رایگان|
Metal organic vapor deposition (MOCVD) is a well known method for preparing high quality and large area CuIn1 − xGaxSe2 (CIGS) absorber layers. Some in-situ non-contact monitoring systems are needed when CIGS absorber layers are manufactured in industry. In this study, CuInSe2 (CIS) and CIGS thin films with different composition ratios, [Cu]/[In + Ga], were prepared by MOCVD using [Me2In(μ-SeMe)]2, hexafluoroacetylacetonate Cu(I) (3,3-dimethyl-1-butene), trimethyl gallium and dimethyle diselenide as the In–Se single source, Cu, Ga and Se precursors, respectively. The Raman shift spectra of the films with various composition ratios were analyzed to produce a basic algorithm that can determine the composition ratios of CIS and CIGS thin films indirectly.
Journal: Thin Solid Films - Volume 519, Issue 13, 29 April 2011, Pages 4390–4393