Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1 − x) S2 nanowires by electrospun route

Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60–80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.