Low temperature chemical vapor deposition of nanocrystalline V2O5 thin films

Spatially uniform, carbon-free thin films of V2O5 were deposited on silicon by chemical vapor deposition using vanadium oxide triisopropoxide and water as gaseous precursors, in the temperature range of 100–300 °C. Films with substantial crystallinity were obtained for deposition temperatures as low as 180 °C. The “neat” chemistry that nominally leaves no fragments of ligand or water in the solid promotes film purity and reduces the deposition temperature needed for crystallization. Such deposition temperatures also open up additional possibilities for using crystalline vanadia on fragile substrates such as polymers for electronics and optical applications.