کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668881 1008876 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sb-modified growth of stacked Ge/Si(100) quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Sb-modified growth of stacked Ge/Si(100) quantum dots
چکیده انگلیسی

We report on the Sb induced modifications of the morphology of self assembled Ge/Si(100) quantum dot stacks in a Si matrix grown by a molecular beam epitaxy. It is shown that the size of the quantum dots in the stack and the Si spacer layer uniformity inside the stack are regulated by the amount of deposited Sb. We consider the thin Sb layer at the Ge/Si growth interface as a factor limiting the surface migration of Si and Ge ad-atoms. The surface diffusion coefficients of Si ad-atom on uncovered pyramid shaped Ge island and on a Ge island covered by a single monolayer of Sb are estimated to be 2.4 μm2s−1 and 2.3 × 10−4 μm2s−1 at a temperature of 600 °C, correspondingly. Based on this remarkable reduction of surface diffusion the morphology of the surface can be preserved when the growth is continued after the single monolayer of Sb is at the surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 11, 31 March 2011, Pages 3669–3673
نویسندگان
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