کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668893 | 1008876 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of CoNx ultra-thin films during direct-current nitrogen ion sputtering in ultrahigh vacuum
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of CoNx ultra-thin films during direct-current nitrogen ion sputtering in ultrahigh vacuum Formation of CoNx ultra-thin films during direct-current nitrogen ion sputtering in ultrahigh vacuum](/preview/png/1668893.png)
چکیده انگلیسی
This study reports the formation of ultra-thin cobalt nitride (CoNx) films on a Co/ZnO(002) crystal by low-energy ion sputtering of nitrogen in an ultrahigh vacuum system. The CoNx film formed during ion bombardment in which the nitrogen plasma (N+) results in both sputtering and implantation in the formation process of CoNx, especially for the Co adsorbed layers. Auger electron spectroscopy analysis shows that the composition ratio x as a function of sputtering time was highly related to the N+ ion energy that was varied from 0.5 to 2 keV. The composition ratio x of CoNx films is inversely proportional to the ion energy. Low-energy ion sputtering is possible to fabricate ultra-thin CoNx films and to adjust their chemical compositions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 11, 31 March 2011, Pages 3739–3744
Journal: Thin Solid Films - Volume 519, Issue 11, 31 March 2011, Pages 3739–3744
نویسندگان
Chiung-Wu Su, Yen-Chu Chang, Tsung-Hsuan Tsai, Sheng-Chi Chang, Ming-Siang Huang,