کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668899 1008876 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical responses of chalcogenide films in the photodoping process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Electrical responses of chalcogenide films in the photodoping process
چکیده انگلیسی

The photodoping process in Al/AsS2/Ag tri-layer films has been studied through measurements of electrical impedance, photodoped-layer thickness, and photocurrent. Frequency dependence of the impedance suggests that the sample under photodoping can be approximated by an equivalent electrical circuit. A thickness of photodoped layers, which is estimated from the impedance, is in agreement with a geometrical thickness measured by an atomic force microscope for chemically etched samples. Under the photodoping (with zero bias voltages), a photocurrent remains constant at ~ 5 pA, and near the completion it increases to ~ 1 nA, which is followed with a gradual decrease. By applying a bias voltage between the top (semi-transparent Al) and bottom (Ag) electrodes, we can change a photodoping rate by an order. This rate change is attributable to the modulation of an effective electric field in the doped layer, which induces the motion of Ag ions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 11, 31 March 2011, Pages 3773–3777
نویسندگان
, ,