کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668924 | 1008876 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of microcrystalline-Si thin film transistors by using self-aligned nickel-silicided process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of microcrystalline-Si thin film transistors by using self-aligned nickel-silicided process Formation of microcrystalline-Si thin film transistors by using self-aligned nickel-silicided process](/preview/png/1668924.png)
چکیده انگلیسی
The formation of microcrystalline-Si thin film transistors (μC-Si TFTs) by using self-aligned nickel-silicided process has been studied. The μC-Si TFTs have been generally fabricated as the top-gate staggered-type structure due to the limitation of process temperature up to 200 °C for practical device applications on organic polymer substrates. However, at the processing temperature of 200 °C, this proposed self-aligned nickel-silicided scheme can cause better device characteristics of μC-Si TFTs than the general top-gate staggered structure, without extra photo masking step. As compared to the general top-gate staggered structure, the self-aligned nickel-silicided scheme can lead to larger bending of energy band near the source region, which facilitates causing more carrier tunneling from the source contact electrode. As a result, this proposed self-aligned nickel-silicided scheme can obviously cause a larger on-state current of μC-Si TFTs than the previous top-gate staggered structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 11, 31 March 2011, Pages 3902-3905
Journal: Thin Solid Films - Volume 519, Issue 11, 31 March 2011, Pages 3902-3905
نویسندگان
M.-H. Juang, Y.-S. Peng, B.-J. Liu,