Electrical, photoelectrical, and photoelectrochemical properties of electrodeposited CdTe films subjected to high-energy irradiation

The general goal of this work is to study the structure and photoelectrical properties of the electrochemically deposited thin CdTe films. The conducted investigation has shown that (i) as-deposited films have the single-phase structure with a grain size of 1–10 μm and are of the n-type conductivity; (ii) photosensitivity abruptly decreases when the film thickness is over 10 μm; (iii) annealing at temperatures less than 500 °C improves the film quality with retention of the n-type conductivity; and (iv) photosensitivity of the films is not impaired under irradiation by 6 MeV electrons with a fluence of 5 × 1014 cm− 2.