Fabrication and characterisation of Cu(In,Ga)Se2 solar cells on polyimide

Solar cells with the structure ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se2/Mo/polyimide were examined using a range of techniques. The elemental composition of the Cu(InGa)Se2 (CIGS) layers, their crystalline structure and optical properties were studied. Photoluminescence (PL) spectra of the CIGS absorber layers were studied as functions of temperature (4.2–240 K) and excitation power density. The band gap energy Eg of the CIGS layers was determined by employing photoluminescence excitation (PLE) spectroscopy. The influence of sodium incorporation on the PL properties of CIGS was analysed. Correlations of the optical properties of the CIGS absorber layers and the photovoltaic parameters of the solar cells were revealed.