کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669024 | 1008878 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p-i-n structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p-n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 21, 31 August 2011, Pages 7360-7363
Journal: Thin Solid Films - Volume 519, Issue 21, 31 August 2011, Pages 7360-7363
نویسندگان
A.J. Clayton, S.J.C. Irvine, V. Barrioz, W.S.M. Brooks, G. Zoppi, I. Forbes, K.D. Rogers, D.W. Lane, K. Hutchings, S. Roncallo,