کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669032 | 1008878 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Phase composition of selenized Cu2ZnSnSe4 thin films determined by X-ray diffraction and Raman spectroscopy
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Phase composition of selenized Cu2ZnSnSe4 thin films determined by X-ray diffraction and Raman spectroscopy Phase composition of selenized Cu2ZnSnSe4 thin films determined by X-ray diffraction and Raman spectroscopy](/preview/png/1669032.png)
چکیده انگلیسی
Thin layers of Sn onto Cu–Zn alloy with different component ratios were processed at different temperatures. Scrupulous comparative analyses were performed by room temperature Raman spectroscopy and X-ray-diffractometry. An excess of tin on the surface results in isothermal selenization at 450 °C in the hexagonal residuals of unstable SnSe2 in the well-crystallized Stannite — Cu2ZnSnSe4. In similar selenization conditions, copper-rich layers as precursors result in the Stannite phase with micro-immersions of CuSe. Low-temperature photoluminescence spectra of selenized films indicated to two Gaussian shaped bands at 0.81 and 1.16 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 21, 31 August 2011, Pages 7394–7398
Journal: Thin Solid Films - Volume 519, Issue 21, 31 August 2011, Pages 7394–7398
نویسندگان
M. Ganchev, J. Iljina, L. Kaupmees, T. Raadik, O. Volobujeva, A. Mere, M. Altosaar, J. Raudoja, E. Mellikov,