کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669083 1008879 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces
چکیده انگلیسی

The effects of Sb/As soak times, prior to growth of GaAsSb on GaAs were investigated by High Resolution X-Ray Diffraction (HRXRD) and photoluminescence (PL). Multiple quantum well samples with soak times of 0 s, 30 s and 60 s were grown at 500 °C with nominally identical Sb and As fluxes. HRXRD results show that a 30 s soak minimizes diffuse scattering seen around superlattice peaks in the reciprocal space maps, an effect attributed to corrugations in the GaAs–GaAsSb interface. An inferred band diagram calculated using a four band k.p model and modified taking into account the HRXRD results was used to explain PL spectra taken for each sample at 80 K. It is concluded that an optimum soak time exists for GaASb growth on GaAs, determined by the growth conditions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 1, 29 October 2010, Pages 64–68
نویسندگان
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